@inproceedings { Servati06b, title = {How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?}, journal = {International Electron Device Meeting (IEDM) Technical Digest}, year = {2006}, month = {11/12/2006}, pages = {295-298}, address = {San Francisco, CA}, author = {C.H. Lee and A. Sazonov and J. Robertson and A. Nathan and M. Rad and P. Servati and W.I. Milne} }