@inproceedings { IEDM2008, title = {High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor}, journal = {IEEE International Electron Device Meeting}, year = {2008}, month = {12/2008}, author = {Yang, B and Takalkar, R. and Ren, Z. and Black, L. and Dube, A. and Weijtmans, J.W. and Li, J. and Johnson, J.B. and Faltermeier, J. and Madan, A. and Zhu, Z. and Turansky, A. and Xia, G. and Chakravarti, A. and Pal, R. and Chan, K. and Reznicek, A. and Adam, T.N. and de Sou} }