@article { Mobility2011a, title = {Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors}, journal = {APPLIED PHYSICS LETTERS}, volume = {99}, year = {2011}, month = {07/2011}, pages = {012106}, author = {Chih-Hao Dai,Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-Hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, Guangrui Xia, Osbert Cheng, and Cheng Tung Huang} }