@inproceedings { 981028, title = {Analysis of silicon Schottky barrier solar cells}, journal = {11th IEEE Photovoltaic Specialists Conference}, year = {1975}, note = {silicon Schottky barrier solar cells;model;metal/single crystal silicon diodes;photovoltaic solar energy convertors;semi-conductor;performance prediction;}, pages = {371 - 5}, type = {inproceedings}, address = {Scottsdale, AZ, USA}, abstract = {A model is presented that allows prediction of the performance of metal/single crystal silicon diodes as photovoltaic solar energy convertors. Calculations on the gold/n-type silicon system indicate that the internal quantum efficiency of the device is high over most of the working wavelength range; that the major component of the photocurrent arises in the bulk of the semi-conductor; and that there is an optimum metal film thickness as regards conversion efficiency}, keywords = {Schottky-barrier diodes;semiconductor device models;solar cells;}, author = { McOuat, R.F. and Pulfrey, D.L.} }