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2008
Yang, B, Takalkar, R., Ren, Z., Black, L., Dube, A., Weijtmans, J.W., Li, J., Johnson, J.B., Faltermeier, J., Madan, A., Zhu, Z., Turansky, A., Xia, G., Chakravarti, A., Pal, R., Chan, K., Reznicek, A., Adam, T.N., de Sou, "High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor", IEEE International Electron Device Meeting, 12/2008. Tagged XML BibTex