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Filters: author is J. L. Hoyt
2005
J. Li, D. Anjum, R. Hull, G. Xia and J. L. Hoyt, "Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging", Applied Physics Letters, vol. 87, 11/2005. Tagged XML BibTex
2004
Guangrui Xia, H. M. Nayfeh, M. L. Lee, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li,R. Hull, N. Klymko, and J. L. Hoyt, "“Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs", IEEE Transactions on Electron Devices, vol. 51, 12/2004. Tagged XML BibTex
2002
J. L. Hoyt, H. M. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E. A. Fitzgerald, D. A.Antoniadis, "Strained silicon MOSFET technology", International Electron Devices Meeting 2002, 12/2002. Tagged XML BibTex