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2014
Yuanwei Dong, Winston Chern, Patricia M Mooney, Judy L Hoyt and Guangrui (Maggie) Xia, "On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures", Semiconductor Science and Technology, vol. 29, pp. 11, 01/2014. Tagged XML BibTex
2010
Guangrui Xia, Judy L. Hoyt, "Si-Ge Interdiffusion under Oxidizing Conditions in Epitaxial SiGe Heterostructures with High Compressive Stress", APPLIED PHYSICS LETTERS, vol. 96, pp. 122107, 03/2010. Abstract Tagged XML BibTex
2007
Judy L Hoyt, Cait Ni Chleirigh, Leonardo Gomez, Ingvar Aberg and Guangrui Xia, "“Strained Si-Ge Heterostructure Channel Materials for Bulk and Ultra-thin Body MOSFETs", Materials Research Society Symposium Proceedings, 04/2007. Tagged XML BibTex
Guangrui Xia, Michael Canonico, and Judy L. Hoyt, "Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors", Journal of Applied Physics, vol. vol. 101, pp. 044901, 02/2007. Abstract Tagged XML BibTex
2006
Guangrui Xia, Michael Canonico, and Judy L. Hoyt, "Interdiffusion in strained Si/Strained SiGe epitaxial heterostructures", Semiconductor Science and Technology, vol. 22, 11/2006. Tagged XML BibTex
Guangrui Xia, Michael Canonico, and Judy L. Hoyt, "“Interdiffusion in SiGe/Si Epitaxial Heterostructures", 2006 International SiGe Technology and Device Meeting, 05/2006. Tagged XML BibTex
Guangrui Xia, Michael Canonico, O. O. Olubuyide and Judy L. Hoyt, "Strain dependence of Si-Ge interdiffusion in epitaxial Si/Si1-yGey/Si heterostructures on relaxed Si1-xGex substrates", Applied Physics Letters, vol. 88, 01/2006. Tagged XML BibTex
2005
J. Li, D. Anjum, R. Hull, G. Xia and J. L. Hoyt, "Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging", Applied Physics Letters, vol. 87, 11/2005. Tagged XML BibTex
Dalaver Anjum, Jian Li, Guangrui Xia, Judy L. Hoyt, and Robert Hull, "Characterization of ultrathin strained-Si channel layers of n-MOSFETs using transmission electron microscopy", Materials Research Society Symposium Proceedings, vol. 864, 03/2005. Tagged XML BibTex
2004
Guangrui Xia, H. M. Nayfeh, M. L. Lee, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li,R. Hull, N. Klymko, and J. L. Hoyt, "“Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs", IEEE Transactions on Electron Devices, vol. 51, 12/2004. Tagged XML BibTex
2002
J. L. Hoyt, H. M. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E. A. Fitzgerald, D. A.Antoniadis, "Strained silicon MOSFET technology", International Electron Devices Meeting 2002, 12/2002. Tagged XML BibTex